Composition Modulation in High-k Hafnium Silicate Films

Microstructure and optical properties of Pr3+-doped hafnium silicate films

In this study, we report on the evolution of the microstructure and photoluminescence properties of Pr3+-doped hafnium silicate thin films as a function of annealing temperature (TA). The composition and microstructure of the films were characterized by means of Rutherford backscattering spectrometry, spectroscopic ellipsometry, Fourier transform infrared absorption, and X-ray diffraction, whil...

Hafnium-based High-k Gate Dielectrics

16 Hafnium - based High - k Gate Dielectrics

Scaling of silicon dioxide dielectrics has once been viewed as an effective approach to enhance transistor performance in complementary metal-oxide semiconductor (C-MOS) technologies as predicted by Moore’s law [1]. Thus, in the past few decades, reduction in the thickness of silicon dioxide gate dielectrics has enabled increased numbers of transistors per chip with enhanced circuit functionali...

Diffusion and interface growth in hafnium oxide and silicate ultrathin films on Si(001)

L.V. Goncharova,1,* M. Dalponte,1 T. Feng,1 T. Gustafsson,1 E. Garfunkel,2 P.S. Lysaght,3 and G. Bersuker3 1Departments of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, USA 2Department of Chemistry and Chemical Biology, Rutgers University, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, USA 3Sematech, Austin, Texas 78741, USA (Received 30...

Optical properties and bandgap evolution of ALD HfSiOx films

Hafnium silicate films with pure HfO2 and SiO2 samples as references were fabricated by atomic layer deposition (ALD) in this work. The optical properties of the films as a function of the film composition were measured by vacuum ultraviolet (VUV) ellipsometer in the energy range of 0.6 to 8.5 eV, and they were investigated systematically based on the Gaussian dispersion model. Experimental res...